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Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunctionsolar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

《能源前沿(英文)》 2017年 第11卷 第1期   页码 85-91 doi: 10.1007/s11708-016-0437-3

摘要: The intrinsic a-Si:H passivation layer inserted between the doped a-Si:H layer and the c-Si substrate is very crucial for improving the performance of the a-Si:H/c-Si heterojunction (SHJ) solar cell. The passivation performance of the a-Si:H layer is strongly dependent on its microstructure. Usually, the compact a-Si:H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition (PECVD) can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si:H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a-Si:H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation performance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si:H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si:H layer microstructure was further investigated by Raman and Fourier transform infrared (FTIR) spectroscopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si:H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the open-circuit voltage ( ) of up to 0.732 V.

关键词: PECVD     high pressure and high power     a-Si:H microstructure     passivation     heterojunction solar cell    

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

《化学科学与工程前沿(英文)》 2020年 第14卷 第6期   页码 997-1005 doi: 10.1007/s11705-019-1906-0

摘要: Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost, less material consumption and easy mass production. Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers. Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber. In this work, we designed and simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet, green, red as well as near infrared range, respectively. By tuning the Ge content, the record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H. To further reduce the material cost, thickness dependent device performances have been conducted. It can be found that the design of total thickness of 4 m is the optimal device design in balancing the thickness and the . While the design of ultrathin quadruple junction device with total thickness of 2 m is the optimized device design regarding cost and long-term stability with a little bit more reduction in . These results indicated that our solar cells combine the advantages of low cost and high stability. Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.

关键词: thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum efficiency    

Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunctionsolar cells

Haibin HUANG,Gangyu TIAN,Tao WANG,Chao GAO,Jiren YUAN,Zhihao YUE,Lang ZHOU

《能源前沿(英文)》 2017年 第11卷 第1期   页码 92-95 doi: 10.1007/s11708-016-0432-8

摘要: Double-layer emitters with different doping concentrations (DLE) have been designed and prepared for amorphous silicon/crystalline silicon (α-Si:H/c-Si) heterojunction solar cells. Compared with the traditional single layer emitter, both the experiment and the simulation (AFORS-HET, http://www.paper.edu.cn/html/releasepaper/2014/04/282/) prove that the double-layer emitter increases the short circuit current of the cells significantly. Based on the quantum efficiency (QE) results and the current-voltage-temperature analysis, the mechanism for the experimental results above has been investigated. The possible reasons for the increased current include the enhancement of the QE in the short wavelength range, the increase of the tunneling probability of the current transport and the decrease of the activation energy of the emitter layers.

关键词: double-layer emitter     α-Si:H/c-Si heterojunction solar cell     short circuit current     quantum efficiency     current-voltage-temperature    

POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

《能源前沿(英文)》 2017年 第11卷 第1期   页码 42-51 doi: 10.1007/s11708-016-0433-7

摘要: POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

关键词: POCl3 diffusion     emitter recombination     oxidation     silicon    

SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

《能源前沿(英文)》 2017年 第11卷 第1期   页码 52-59 doi: 10.1007/s11708-016-0429-3

摘要: Surface passivation is one of the primary requirements for high efficient silicon solar cells. Though the current existed passivation techniques are effective, expensive equipments are required. In this paper, a comprehensive understanding of the SiO passivation layer grown by liquid phase deposition (LPD) was presented, which was cost-effective and very simple. It was found that the post-annealing process could significantly enhance the passivation effect of the LPD SiO film. Besides, it was revealed that both chemical passivation and field-effect passivation mechanisms played important roles in outstanding passivation effect of the LPD SiO film through analyzing the minority carrier lifetime and the surface recombination velocity of n-type and p-type silicon wafers. Although the deposition parameters had little influence on the passivation effect, they affected the deposition rate. Therefore, appropriate deposition parameters should be carefully chosen based on the compromise of the deposition rate and fabrication cost. By utilizing the LPD SiO film as surface passivation layer, a 19.5%-efficient silicon solar cell on a large-scale wafer (156 mm × 156 mm) was fabricated.

关键词: Si solar cell     passivation     SiO2     liquid phase deposition     carrier lifetime    

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

《能源前沿(英文)》 2017年 第11卷 第1期   页码 78-84 doi: 10.1007/s11708-016-0435-5

摘要: n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metal contamination can offer one of the best Si-based solar cells. In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the top, middle and tail positions of the ingot, exhibited a stable high efficiency of>22% in spite of the various profiles of the resistivity and lifetime, which demonstrated the high material utilization of n-type ingot. In addition, for effectively converting the sunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si wafer were investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). Furthermore, the dependence of SHJ solar cell open-circuit voltage on the surface topography was discussed, which indicated that the uniformity of surface pyramid helps to improve the open-circuit voltage and conversion efficiency. Moreover, the simulation revealed that the highest efficiency of the SHJ solar cell could be achieved by the wafer with a thickness of 100 µm. Fortunately, over 23% of the conversion efficiency of the SHJ solar cell with a wafer thickness of 100 µm was obtained based on the systematic optimization of cell fabrication process in the pilot production line. Evidently, the large availability of both n-type ingot and thinner wafer strongly supported the lower cost fabrication of high efficiency SHJ solar cell.

关键词: n-type Cz-Si     thinner wafer     surface texture     high efficiency     SHJ solar cell    

Highlights of mainstream solar cell efficiencies in 2022

《能源前沿(英文)》 2023年 第17卷 第1期   页码 9-15 doi: 10.1007/s11708-023-0871-y

摘要: Highlights of mainstream solar cell efficiencies in 2022

Highlights of mainstream solar cell efficiencies in 2021

《能源前沿(英文)》 2022年 第16卷 第1期   页码 1-8 doi: 10.1007/s11708-022-0816-x

利用三元合金保护和催化的硅光阳极与廉价硅太阳能电池相结合实现12.0%的太阳能制氢效率 Article

何凌云, 洪欣, 王亦清, 邢众航, 耿嘉峰, 郭鹏慧, 苏进展, 沈少华

《工程(英文)》 2023年 第25卷 第6期   页码 128-137 doi: 10.1016/j.eng.2022.03.023

摘要:

n型硅(n-Si)表面在水溶液中容易被氧化和钝化,导致其在光电化学(PEC)分解水的析氧反应(OER)动力学缓慢。本工作通过欠电位沉积成功地在p+n-Si基底上电沉积了三金属Ni0.9Fe0.05Co0.05保护层。制备的Ni0.9Fe0.05Co0.05/p+n-Si光阳极具有优异的稳定性和PEC水氧化活性,具有相对低的OER起始电位(相对于可逆氢电极电势(RHE)仅为0.938 V),并且在1.23 V vs.RHE电位时具有较高的光电流密度(33.1 mA∙cm-2),显著优于Ni/p+n-Si光阳极。工作证明了Fe在Ni层的掺杂会在Ni0.9Fe0.05Co0.05/p+n-Si界面处产生较大的能带弯曲,促进界面电荷分离。

关键词: n-Si     光阳极     水分解     光伏/光电化学器件    

Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward

《能源前沿(英文)》 doi: 10.1007/s11708-023-0881-9

摘要: Sunlight-powered water splitting presents a promising strategy for converting intermittent and virtually unlimited solar energy into energy-dense and storable green hydrogen. Since the pioneering discovery by Honda and Fujishima, considerable efforts have been made in this research area. Among various materials developed, Ga(X)N/Si (X = In, Ge, Mg, etc.) nanoarchitecture has emerged as a disruptive semiconductor platform to split water toward hydrogen by sunlight. This paper introduces the characteristics, properties, and growth/synthesis/fabrication methods of Ga(X)N/Si nanoarchitecture, primarily focusing on explaining the suitability as an ideal platform for sunlight-powered water splitting toward green hydrogen fuel. In addition, it exclusively summarizes the recent progress and development of Ga(X)N/Si nanoarchitecture for photocatalytic and photoelectrochemical water splitting. Moreover, it describes the challenges and prospects of artificial photosynthesis integrated device and system using Ga(X)N/Si nanoarchitectures for solar water splitting toward hydrogen.

关键词: Ga(X)N/Si nanoarchitecture     artificial photosynthesis     water splitting     solar toward hydrogen    

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

《能源前沿(英文)》 2017年 第11卷 第1期   页码 67-71 doi: 10.1007/s11708-016-0430-x

摘要: Boron-oxygen defects can cause serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon (c-Si), which are formed under the injection of excess carriers induced either by illumination or applying forward bias. In this contribution, we have demonstrated that the passivation process of boron-oxygen defects can be induced by applying forward bias for a large quantity of solar cells, which is much more economic than light illumination. We have used this strategy to trigger the passivation process of batches of aluminum back surface field (Al-BSF) solar cells and passivated emitter and rear contact (PERC) solar cells. Both kinds of the treated solar cells show high stability in efficiency and suffer from very little LID under further illumination at room temperature. This technology is of significance for the suppression of LID of c-Si solar cells for the industrial manufacture.

关键词: Boron-oxygen defects     c-Si solar cells     light-induced degradation     passivation     forward bias    

Numerical and experimental research of the characteristics of concentration solar cells

Zilong WANG, Hua ZHANG, Binlin DOU, Weidong WU, Guanhua ZHANG

《能源前沿(英文)》 2021年 第15卷 第2期   页码 279-291 doi: 10.1007/s11708-019-0637-8

摘要: The development of automatic tracking solar concentrator photovoltaic systems is currently attracting growing interest. High concentration photovoltaic systems (HCPVs) combining triple-junction InGaP/lnGaAs/Ge solar cells with a concentrator provide high conversion efficiencies. The mathematical model for triple-junction solar cells, having a higher efficiency and superior temperature characteristics, was established based on the one-diode equivalent circuit cell model. A paraboloidal concentrator with a secondary optic system and a concentration ratio in the range of 100X–150X along with a sun tracking system was developed in this study. The GaInP/GalnAs/Ge triple-junction solar cell, produced by AZUR SPACE Solar Power, was also used in this study. The solar cells produced by Shanghai Solar Youth Energy (SY) and Shenzhen Yinshengsheng Technology Co. Ltd. (YXS) were used as comparison samples in a further comparative study at different concentration ratios (200X–1000X). A detailed analysis on the factors that influence the electrical output characteristics of the InGaP/lnGaAs/Ge solar cell was conducted with a dish-style concentrating photovoltaic system. The results show that the short-circuit current ( ) and the open-circuit voltage ( ) of multi-junction solar cells increases with the increasing concentration ratio, while the cell efficiency ( ) of the solar cells increases first and then decreases with increasing concentration ratio. With increasing solar cell temperature, increases, while and decrease. A comparison of the experimental and simulation results indicate that the maximum root mean square error is less than 10%, which provides a certain theoretical basis for the study of the characteristics of triple-junction solar cell that can be applied in the analysis and discussion regarding the influence of the relevant parameters on the performance of high concentration photovoltaic systems.

关键词: concentration     three-junction solar cell     mathematical model     electrical properties     solar energy    

A space solar cell bonding robot

FU Zhuang, ZHAO Yan-zheng, LIU Ren-qiang, DONG Zhi

《机械工程前沿(英文)》 2006年 第1卷 第3期   页码 360-363 doi: 10.1007/s11465-006-0027-x

摘要: A space solar cell bonding robot system which consists of a three-axis Cartesian coordinate s robot, coating device, bonding device, orientation plate, and control subsystem was studied. A method, which can control the thickness o

关键词: Cartesian coordinate     thickness     three-axis Cartesian     orientation     control subsystem    

Economic analysis of a hybrid solar-fuel cell power delivery system using tuned genetic algorithm

Trina SOM, Niladri CHAKRABORTY

《能源前沿(英文)》 2012年 第6卷 第1期   页码 12-20 doi: 10.1007/s11708-012-0172-3

摘要: An economic evaluation of a network of distributed energy resources (DERs) comprising a microgrid structure of power delivery system in an Indian scenario has been made. The mathematical analysis is based on the application of tuned genetic algorithm (TGA). The analyses for optimal power operation pertaining to minimum cost have been made for two cases in Indian power delivery system. The first case deals with the consumers’ individual optimal operation of DERs, while in the second one, consumers altogether form a microgrid with the optimal supply of power from DERs. The total annual costs for these two cases are found to be economically competitive and encouraging. A reduction of approximately 5.7% in the annual cost has been obtained in the case of microgid system than that in the separately operating consumers’ system for a small locality of India. It is observed that the application of TGA results in a reduction of the minimum cost depicting an improved outcome in terms of energy economy.

关键词: distributed energy resources (DERs)     microgrid     tuned genetic algorithm (TGA)    

Application of nanotechnologies in the energy sector: A brief and short review

Ferric CHRISTIAN, EDITH, SELLY, Dendy ADITYAWARMAN, Antonius INDARTO

《能源前沿(英文)》 2013年 第7卷 第1期   页码 6-18 doi: 10.1007/s11708-012-0219-5

摘要: Energy is of great importance in human life because of its benefits as the main resource for human activity. According to International Energy Agency (IEA), energy demands are expected to continue increasing until 2030. Because energy demand will never decrease, it is necessary to develop modern technology, such as nano-based technology, in order to obtain a more effective and efficient process to produce more energy. The application of nano technology or nano material in the field of energy, which involves lithium-ion battery, fuel cell, light emitting diode (LED), ultra-capacitor, and solar cell (including Gr?tzel cell), is a hot topic in many scientific researches. Unfortunately, its current development is hampered by the expensive cost of production compared to conventional technologies. Therefore, priority should be given to nano technology in the energy sector order to obtain higher efficiency, lower production cost, and easier in its application.

关键词: nanotechnology     energy     batteries     fuel cell     Gr?tzel cell     solar cell    

标题 作者 时间 类型 操作

Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunctionsolar cells at high pressure and high power

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

期刊论文

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

期刊论文

Analysis of the double-layer α-Si:H emitter with different doping concentrations for α-Si:H/c-Si heterojunctionsolar cells

Haibin HUANG,Gangyu TIAN,Tao WANG,Chao GAO,Jiren YUAN,Zhihao YUE,Lang ZHOU

期刊论文

POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

期刊论文

SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

期刊论文

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

期刊论文

Highlights of mainstream solar cell efficiencies in 2022

期刊论文

Highlights of mainstream solar cell efficiencies in 2021

期刊论文

利用三元合金保护和催化的硅光阳极与廉价硅太阳能电池相结合实现12.0%的太阳能制氢效率

何凌云, 洪欣, 王亦清, 邢众航, 耿嘉峰, 郭鹏慧, 苏进展, 沈少华

期刊论文

Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward

期刊论文

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

期刊论文

Numerical and experimental research of the characteristics of concentration solar cells

Zilong WANG, Hua ZHANG, Binlin DOU, Weidong WU, Guanhua ZHANG

期刊论文

A space solar cell bonding robot

FU Zhuang, ZHAO Yan-zheng, LIU Ren-qiang, DONG Zhi

期刊论文

Economic analysis of a hybrid solar-fuel cell power delivery system using tuned genetic algorithm

Trina SOM, Niladri CHAKRABORTY

期刊论文

Application of nanotechnologies in the energy sector: A brief and short review

Ferric CHRISTIAN, EDITH, SELLY, Dendy ADITYAWARMAN, Antonius INDARTO

期刊论文